High fill ratio silicon spatial light modulator

ABSTRACT

An optical deflection device for a display application. The optical deflection device includes a semiconductor substrate including an upper surface region and one or more electrode devices provided overlying the upper surface region. The optical deflection device also includes a hinge device including a silicon material and coupled to the upper surface region. The optical deflection device further includes a spacing defined between the upper surface region and the hinge device and a mirror structure including a post portion coupled to the hinge device and a mirror plate portion coupled to the post portion and overlying the hinge device.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a non-provisional application of and claims thebenefit of U.S. Provisional Application No. 60/731,378, filed on Oct.28, 2005, which is herein incorporated by reference in its entirety forall purposes.

The following three regular U.S. patent applications (including thisone) are being filed concurrently, and the entire disclosure of theother applications are incorporated by reference into this applicationfor all purposes:

-   -   application Ser. No. ______, filed Jun. 6, 2006, entitled “High        Fill Ratio Silicon Spatial Light Modulator” (Attorney Docket No.        021713-006210US);    -   application Ser. No. ______, filed Jun. 6, 2006, entitled        “Fabrication of a High Fill Ratio Silicon Spatial Light        Modulator” (Attorney Docket No. 021713-006220US); and    -   application Ser. No. ______, filed Jun. 6, 2006, entitled        “Projection Display System including a High Fill Ratio Silicon        Spatial Light Modulator (Attorney Docket No. 021713-006230US).

BACKGROUND OF THE INVENTION

This present invention relates generally to manufacturing objects. Moreparticularly, the invention relates to a method and structure forfabricating a spatial light modulator with a high fill ratio. Merely byway of example, the invention has been applied to the formation of aspatial light modulator having an all silicon mirror, torsion springhinge, and top electrode. The method and device can be applied tospatial light modulators as well as other devices, for example,micro-electromechanical sensors, detectors, and displays.

Spatial light modulators (SLMs) have numerous applications in the areasof optical information processing, projection displays, video andgraphics monitors, televisions, and electrophotographic printing.Reflective SLMs are devices that modulate incident light in a spatialpattern to reflect an image corresponding to an electrical or opticalinput. The incident light may be modulated in phase, intensity,polarization, or deflection direction. A reflective SLM is typicallycomprised of an area or two-dimensional array of addressable pictureelements (pixels) capable of reflecting incident light.

Some conventional SLMs utilize array designs that include an array ofmicro-mirrors with a set of electrodes and a memory array positionedunderneath each of the micro-mirrors. For display applications, themicro-mirrors are generally fabricated using semiconductor processingtechniques to provide devices with dimensions on the order of 15 μm×15μm. Using such small mirrors enables display applications to use SLMs inapplications characterized by increased image resolution for a givendisplay size. Merely by way of example, HDTV systems, with a resolutionof 1,080 scan lines×1,920 pixels/line, are currently available toconsumers.

One option for increasing the number of micro-mirrors in an array is toadd additional micro-mirrors to the array. However, the addition ofmicro-mirrors of a conventional size increases the silicon real estateused to fabricate the array. Another option is to add additionalmicro-mirrors while decreasing the size of the individual micro-mirrors,thereby maintaining a generally constant array dimension size. The useof current materials and fabrication processes presents design andmanufacturing problems as the mirror size is decreased. Thus, there is aneed in the art for a spatial light modulator with an improvedarchitecture including materials and fabrication processes.

SUMMARY OF THE INVENTION

According to the present invention, techniques related to manufacturingobjects are provided. More particularly, the invention relates to amethod and structure for fabricating a spatial light modulator with ahigh fill ratio. Merely by way of example, the invention has beenapplied to the formation of a spatial light modulator having an allsilicon mirror, torsion spring hinge, and top electrode. The method anddevice can be applied to spatial light modulators as well as otherdevices, for example, micro-electromechanical sensors, detectors, anddisplays.

According to an embodiment of the present invention, an opticaldeflection device for a display application is provided. The opticaldeflection device includes a semiconductor substrate including an uppersurface region and one or more electrode devices provided overlying theupper surface region. The optical deflection device also includes ahinge device comprising a silicon material and coupled to the uppersurface region and a spacing defined between the upper surface regionand the hinge device. The optical deflection device further includes amirror structure including a post portion coupled to the hinge deviceand a mirror plate portion coupled to the post portion and overlying thehinge device.

According to another embodiment of the present invention, a spatiallight modulator for display applications is provided. The spatial lightmodulator includes a semiconductor substrate comprising an upper surfaceregion and one or more multi-level electrode devices provided overlyingthe upper surface region. The one or more multi-level electrode devicesinclude a first level and a second level. The spatial light modulatoralso includes an insulating layer overlying the first level of the oneor more multi-level electrode devices and a hinge device coupled to theinsulating layer. The hinge device includes a silicon material and iscoplanar with the second level of the one or more multi-level electrodedevices. The spatial light modulator further includes a first spacingdefined between the semiconductor substrate and the hinge device and amirror structure comprising a silicon material. The mirror structureoverlies a portion of the hinge device and is adapted to move from afirst position to a second position. Additionally, the spatial lightmodulator includes a second spacing defined between the first level ofthe one or more multi-level electrode devices and the mirror structureand a third spacing defined between the second level of the one or moremulti-level electrode devices and the mirror structure.

According to yet another embodiment of the present invention, an arrayof optical deflection devices for a display application is provided. Thearray of optical deflection devices includes a semiconductor substrateincluding a plurality of electrode devices disposed in array form as anarray of cells and a bonding region. The array of optical deflectiondevices also includes a plurality of hinge devices including siliconmaterial. Each of the plurality of hinge devices includes a bondingportion and a deposition interface. The bonding portion of the pluralityof hinge devices is bonded to a portion of the bonding region of thesemiconductor substrate. The array of optical deflection devices furtherincludes a spacing defined between the plurality of electrode devicesand the plurality of hinge devices and a plurality of mirror structures.Each of the plurality of mirror structures includes a post regioncoupled to the deposition interface of the plurality of hinge devicesand a mirror plate overlying a cell of the array of cells of theplurality of electrode devices.

According to an alternative embodiment of the present invention, amicro-mirror for display applications is provided. The micro-mirrorincludes a semiconductor substrate including an electrode device layerand a bonding region and a hinge device including silicon materialbonded to the bonding region of the semiconductor substrate. The hingedevice includes a deposition interface opposing the bonding region ofthe semiconductor substrate. The micro-mirror also includes a mirrorpost coupled to the deposition interface and extending to apredetermined distance from the semiconductor substrate and a mirrorplate coupled to the mirror post and overlying the electrode devicelayer.

According to another alternative embodiment of the present invention, amulti-layer semiconductor structure for fabricating a spatial lightmodulator is provided. The multi-layer semiconductor structure includesa semiconductor substrate including a plurality of bias electrodedevices and a plurality of activation electrode devices. The multi-layersemiconductor structure also includes an oxide layer coupled to thesemiconductor substrate and including a bonding interface extending to apredetermined height from the semiconductor substrate. The oxide layerfurther includes a first portion extending from a first one of theplurality of activation electrode devices to the bonding interface and asecond portion extending from a second one of the plurality ofactivation electrode devices to the bonding interface thereby forming anoxide free region adjacent one of the plurality of bias electrodedevices and between the first portion and the second portion. Themulti-layer semiconductor structure further includes a silicon layerbonded to the bonding interface of the oxide layer.

According to a specific embodiment of the present invention, a methodfor forming an optical deflection device is provided. The methodincludes providing a semiconductor substrate including an upper surfaceregion and a plurality of drive devices within one or more portions ofthe semiconductor substrate. The upper surface region includes one ormore patterned structure regions and at least one open region to exposea portion of the upper surface region to form a resulting surfaceregion. The method also includes forming a planarizing materialoverlying the resulting surface region to fill the at least one openregion and cause formation of an upper planarized layer using the fillmaterial. The method further includes forming a thickness of siliconmaterial at a temperature of less than 300° C. to maintain a state ofthe planarizing material.

According to another specific embodiment of the present invention, amethod of fabricating an optical deflection device is provided. Themethod includes providing a substrate, forming a planarized dielectriclayer over the substrate, and forming a cavity in the planarizeddielectric layer. The method also includes performing a layer transferprocess to bond a single crystal silicon layer to the planarizeddielectric layer, forming a plurality of vias passing through the singlecrystal silicon layer and the planarized dielectric layer, and forming aplurality of electrical connections passing through the plurality ofvias. The method further includes forming a hinge coupled to thesubstrate, forming a planarized material layer coupled to the hinge,forming a cavity in the planarized material layer, forming a mirrorstructure filling at least a portion of the cavity, and releasing themirror structure.

According to yet another specific embodiment of the present invention, amethod for forming a planarized layer is provided. The method includesproviding a semiconductor substrate including an upper surface regionand a plurality of drive devices within one or more portions of thesemiconductor substrate. The upper surface region includes one or morepatterned structure regions and at least one open region to expose aportion of the upper surface region to form a resulting surface region.The method also includes dispensing a fill material having a fluidcharacteristic overlying the resulting surface region to fill the atleast one open region and cause formation of an upper planarized layerusing the fill material.

According to yet another alternative embodiment of the presentinvention, a method of forming a composite substrate structure isprovided. The method includes providing a substrate comprising aplurality of electrode devices and forming a planarized dielectric layerover the substrate. The planarized dielectric layer defines an uppersurface opposing the substrate. The method also includes forming acavity extending from the upper surface of the planarized dielectriclayer to a predetermined depth. The cavity volume is defined by a cavityarea parallel to the upper surface of the planarized dielectric layerand the predetermined depth. The method further includes joining asingle crystal silicon layer to the upper surface of the planarizeddielectric layer to define a bond area greater than the cavity area.

According to a particular embodiment of the present invention, a displaysystem is provided. The display system includes a light source and afirst optical system optically coupled to the light source and adaptedto provide an illumination beam along an illumination path. The displaysystem also includes a spatial light modulator positioned in theillumination path. The spatial light modulator includes a semiconductorsubstrate including a plurality of electrode devices and a hingestructure coupled to the semiconductor substrate. The hinge structureincludes silicon material. The spatial light modulator also includes amirror post coupled to the hinge structure and extending to apredetermined distance from the semiconductor substrate and a mirrorplate coupled to the mirror post and overlying the plurality ofelectrode devices. The display system further includes a second opticalsystem optically coupled to the spatial light modulator and adapted toproject an image onto a projection surface.

According to another particular embodiment of the present invention, aprojection display system is provided. The projection display systemincludes a light source adapted to provide an illumination beam and aspatial light modulator including a plurality of micro-mirrorscontrollably deflectable between a first deflection angle and a seconddeflection angle. Each micro-mirror of the plurality of micro-mirror isassociated with a pixel of an image and each micro-mirror includes oneor more electrodes provided on a support substrate and a hinge devicecoupled to the support substrate. The hinge device includes siliconmaterial. Each micro-mirror also includes a mirror post coupled to thehinge device and extending away from the support substrate and a mirrorplate coupled to the mirror post and overlying the one or moreelectrodes. The projection display system also includes illuminationoptics adapted to direct the illumination beam to the spatial lightmodulator, optics provided in a projection path lying along the firstdeflection angle and adapted to project the image on a projectionsurface, and optics provided in a light dump path lying along the seconddeflection angle and adapted to reduce an intensity of light propagatingalong the light dump path.

Numerous benefits are achieved using the present invention overconventional techniques. For example, in an embodiment according to thepresent invention, a mirror with a hidden hinge and a high fill ratio isprovided. Utilizing a single crystal silicon hinge, long-termreliability is provided. Moreover, embodiments of the present inventionhave an all silicon mirror and hinge structure that can operate athigher temperatures as a result of matching the coefficient of thermalexpansion of the mirror and hinge. Additionally, fabrication processesutilized herein are characterized by larger bonding areas and reducedbonding tolerances in comparison to conventional designs. Depending uponthe embodiment, one or more of these benefits may exist. These and otherbenefits have been described throughout the present specification andmore particularly below.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a simplified cutaway perspective view of an array of SLMsaccording to an embodiment of the present invention;

FIG. 1B is a simplified schematic diagram of a display system accordingto an embodiment of the present invention;

FIGS. 2A-2C illustrate simplified cross-sectional views of a high fillratio mirror for an SLM according to an embodiment of the presentinvention;

FIG. 2D is a simplified top view of layers of an SLM according to anembodiment of the present invention;

FIGS. 3A-3L illustrate simplified cross-sectional views of a processflow for fabricating an SLM according to an embodiment of the presentinvention;

FIGS. 4A-4F are simplified top views of several layers of an SLMfabricated using the process flow illustrated in FIGS. 3A-3L.

FIG. 5 is a simplified top view illustration of an SLM with dual landingtips according to an embodiment of the present invention;

FIG. 6 is a simplified top view illustration of an SLM with landingposts according to an embodiment of the present invention;

FIG. 7A illustrates a simplified cross-sectional view of an SLM withsilicon landing springs according to an embodiment of the presentinvention;

FIG. 7B is a simplified top view illustration of an SLM with siliconlanding springs according to an embodiment of the present invention;

FIG. 8 illustrates an SLM according to a particular embodiment of thepresent invention;

FIG. 9 illustrates a simplified cross-sectional view of an SLM with asilicon mirror plate electrode according to an embodiment of the presentinvention;

FIGS. 10A-10D illustrate simplified cross-sectional views of a processflow for fabricating an SLM with an electrical contact according to analternative embodiment of the present invention;

FIG. 11 illustrates a simplified cross section view of a silicon/Alalloy mirror according to an embodiment of the present invention;

FIGS. 12A-12D illustrate simplified cross-sectional views of a processflow for fabricating an SLM with a flat amorphous silicon mirroraccording to an embodiment of the present invention;

FIGS. 13A-13E illustrate simplified cross-sectional views of a processflow for fabricating an SLM with a flat composite mirror according to anembodiment of the present invention;

FIGS. 14A-14B illustrate simplified cross-sectional views of a processflow for fabricating an SLM with a low temperature spin on glass (SOG)mirror according to an embodiment of the present invention; and

FIG. 15 is a simplified flowchart illustrating a process of fabricatingan optical deflection device according to an embodiment of the presentinvention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

According to the present invention, techniques related to manufacturingobjects are provided. More particularly, the invention relates to amethod and structure for fabricating a spatial light modulator with ahigh fill ratio. Merely by way of example, the invention has beenapplied to the formation of a spatial light modulator having an allsilicon mirror, torsion spring hinge, and top electrode. The method anddevice can be applied to spatial light modulators as well as otherdevices, for example, micro-electromechanical sensors, detectors, anddisplays.

FIG. 1A is a simplified cutaway perspective view of an array of SLMsaccording to an embodiment of the present invention. As illustrated,this cutaway view is merely representative of the array of SLMs atvarious stages of processing. As described more fully below, independentcontrol of the SLMs in an array is utilized in embodiments according tothe present invention to form images in display applications and otherapparatus.

As illustrated in FIG. 1A, the array of SLMs 100 is mounted on a supportsubstrate 105. In some embodiments, the support substrate is a siliconsubstrate with CMOS control circuitry fabricated using semiconductorprocessing techniques. Multi-level electrodes 112/118 are coupled to thesupport substrate 105. As illustrated in FIG. 1A, the multi-levelelectrodes comprise two complementary electrodes positioned on oppositesides of a flexible member 116 coupled to a standoff structure 114. Asdescribed more fully below, in an embodiment, drive voltages areprovided to the complementary electrodes, providing electrostaticattraction forces acting on the micro-mirror plates 130.

In operation, the individual reflective elements or pixels 134 making upan array of micro-mirrors in an SLM are selectively deflected, therebyserving to spatially modulate light that is incident on and reflected bythe micro-mirrors in the SLM. The spacing 132 between adjacentmicro-mirrors is on the order of less than a micron. In a specificembodiment, the spacing 132 is 0.6 μm with micro-mirrors having a pitchof 10.8 μm. In order to deflect the micro-mirrors, a voltage is appliedto the complementary electrodes and the mirror plate to cause the mirrorto rotate about the torsion spring hinge 116. As will be evident to oneof skill in the art, the pixels are adapted to rotate in both clockwiseand counter-clockwise directions depending on the particular electrodevoltages. When the voltages are removed, the torque present in hinge 116causes the mirror plate 130 to return to the unactivated positionillustrated in FIG. 1A. In the particular embodiment shown in FIG. 1A,landing posts 120 are utilized to arrest the motion of the micro-mirrorin the clockwise and counter-clockwise directions.

FIG. 1A illustrates an embodiment of the present invention in which thecomplementary electrodes are multi-level electrodes 112/118 with raisedcentral portions adjacent the center of the micro-mirror plates. Suchmulti-level electrodes reduce the distance between the top of theelectrode surface and the micro-mirror plates, thereby decreasing themagnitude of the addressing voltages used to actuate the micro-mirrorplates. However, embodiments of the present invention are not limited tomulti-level electrodes. In alternative embodiments, other electrodegeometries are utilized. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

As illustrated in FIG. 1A, each micro-mirror plate 130 is coupled to thesupport substrate 105 by mirror post 136, a torsion spring hinge 116,and standoff structure 114. Referring to one of the micro-mirrors 130,upon actuation of the electrodes, the micro-mirror plate rotates in aplane orthogonal to the longitudinal axis of the torsion spring hinge.In some embodiments, the longitudinal axis of the torsion spring hingeis parallel to a diagonal of the micro-mirror plate. The motion of themicro-mirror is arrested by landing structures 120. In order to providetwo actuated positions, complementary sets of landing structures areprovided on opposite sides of the torsion spring hinge 116. According toembodiments of the present invention, the micro-mirrors are tilted atpredetermined angles in the actuated states, providing for controlledreflection of incident radiation. In a particular embodiment, thepredetermined angles are about ±15°. In other embodiments, thepredetermined angles are less than ±15° or more than ±15°, depending onthe particular applications. Moreover, the predetermined tilt anglesneed not be symmetric, but may be different. One of ordinary skill inthe art would recognize many variations, modifications, andalternatives.

Embodiments of the present invention are not limited to the particulararchitecture described above. In alternative embodiments, a singlelanding pad located at the landing position of the mirror tip is used inplace of the two landing posts. Moreover, two posts positioned at outeredges of the hinge may be used to replace the single standoff structureillustrated. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

As described more fully throughout the present specification, thesupport substrate 105, the standoff structures 114, and the torsionspring hinges 116 are joined using a substrate bonding process accordingto some embodiments of the present invention. In other embodiments,these structures are fabricated using a combination of deposition,patterning, etching, wafer bonding, and other semiconductor processingtechniques. In some embodiments, reflective surfaces are formed on themicro-mirror plates 130, providing an array of SLMs with hidden hinges.For purposes of clarity, the spacing between adjacent micro-mirrors isillustrated in FIG. 1A as a significant fraction of the mirrordimensions. As will be evident to one of skill in the art, reductions inthe space between mirrors will result in an increased fill ratio andimproved image quality in display applications. The spacing betweenadjacent micro-mirrors is generally defined using photolithographicprocesses, providing high fill ratio designs. Additional details relatedto the fabrication of integrated standoff structures and multi-levelelectrodes are described in U.S. patent application Ser. No. 11/250,320,entitled Spatial Light Modulator With Multi-Layer Landing Structures,filed Oct. 13, 2005, commonly assigned, and hereby incorporated byreference for all purposes.

FIG. 1B is a simplified schematic diagram of a display system accordingto an embodiment of the present invention. As shown in FIG. 1B, lamp 150provides an illumination source for the projection display system. Lightfrom lamp 150 is focused using condensing lens 152 prior to passingthrough color wheel 154. Via rotation of the color wheel, a number ofprimary colors are provided, for example, red, green, and blue. Althoughcolor wheel 154 illustrates the use of three primary colors, embodimentsof the present invention are not limited to this number, as additionalcolors or a white light section may be utilized as well. Moreover,embodiments of the present invention are not limited to the use oflamp/color wheel illumination sources, as multiple sources, includinglight emitting diodes and lasers may be used in some embodiments. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

The light passed by the color wheel 154 is focused by shaping lens 156,providing for illumination of spatial light modulator 158. As describedmore fully throughout the present specification, actuation of individualpixels of the spatial light modulator results in the production of aimage that is projected on a display screen (not shown) using projectionlens 160.

FIGS. 2A-2C illustrate simplified cross-sectional views of a high fillratio mirror for an SLM according to an embodiment of the presentinvention. The SLM includes CMOS substrate 105, a bias line 110, amirror landing area 111 located at a peripheral portion of bias line110, and a bias grid 110 b.

CMOS or device substrate 105 includes a number of layers, of which onlya selected few are illustrated in FIGS. 2A-2C. One layer illustrated inthe figures includes multi-level or stepped electrodes 112/118. As willbe evident to one of skill in the art, additional metal, insulator, andvia layers, as well as other devices, are typically fabricated onsubstrate 105. In some embodiments of the present invention, theseadditional layers and devices include CMOS circuitry fabricated inprocessing steps prior to the formation of the electrodes and utilizedto drive the electrodes. In a particular embodiment, these layers, alongwith one or more layers including portions of the electrodes arefabricated using standard CMOS processes.

Referring to FIG. 1A, landing posts 120 are illustrated are replaced inFIG. 2A with the mirror landing areas 111. Other embodiments utilizecombinations of these methods or other techniques to arrest the rotationof the micro-mirrors. The SLM also includes bias vias that are filled bya via plug 242 as described more fully below. Bottom electrode 112,which is defined as a portion of a metal-4 (M4) layer is separated froma silicon top electrode 118 by an oxide layer 220. The use of a stepelectrode design enables the hinge to have an increased length incomparison to single level electrode designs, while still operating atlower voltages.

As shown in FIG. 2A, the via plugs 242 provide electrical connectionbetween the bias grid 110B and a single crystal silicon layer 222 fromwhich a single crystal silicon hinge 116, single crystal silicon landingstructure 214, and single crystal silicon top electrode 118 are formed.An antireflection (AR) coating 224 is formed on layer 222 to provide forreduction of undesirable reflections from locations between adjacentmicro-mirrors.

The micro-mirror structure includes a mirror post 208 and mirror plate210. The mirror structure as illustrated in FIG. 2A utilizes anamorphous silicon mirror post 208 and mirror plate 210 and atitanium/aluminum (Ti/Al) reflective layer 212 deposited on the mirrorplate 210 using physical vapor deposition (PVD). Thus, in someembodiments, the SLM comprises an all silicon mirror structure, althoughthis is not required by the present invention. The mirror structure208/210 is attached to the torsion spring hinge 116 during themicro-mirror formation process. As illustrated in FIGS. 1A and 2A,embodiments of the present invention provide a micro-mirrorcharacterized by a high fill ratio and a hidden hinge. Since the centralsection of the mirror is reflective, high optical quality is provided aswell as reduction of undesired reflections from outside the mirror area,resulting in high contrast. The use of a single crystal silicon hinge116 provides SLMs with long-term reliability and the use of an amorphoussilicon mirror plate 210 provides mechanical rigidity.

The mirror plate 210 provides a mechanical structure that resistdeformation during operation. For example, an amorphous silicon mirrorplate is mechanically rigid as appropriate for a structure that impactslanding structures 120 as illustrated in FIG. 1A during mirror switchingoperations. As described more fully throughout the presentspecification, the materials used in the fabrication of mirror post 208and mirror plate 210 are not limited to amorphous silicon, but a widevariety of materials may be used. Moreover, because both the mirror andhinge structure are fabricated from silicon, the coefficients of thermalexpansion (CTE) are well matched, enabling operation of the SLMs athigher operating temperatures.

During conventional operation of the SLM, the mirror is typicallyswitched between a center or unactivated position and two complementaryactivated positions with equal and opposite deflection angles. In eitherof the activated positions, stiction forces present between the mirrorplate of the micro-mirror and the landing structure, for example, thelanding posts 120 illustrated in FIG. 1A, may prevent the micro-mirrorfrom returning to the center position. As will be evident to one ofskill in the art, pixels of a display sticking in such an activatedstate is undesirable. Accordingly, embodiments of the present inventionprovide torsion spring hinges with increased stiffness to overcomestiction forces and free the micro-mirror from sticking in an activatedstate. As described below, high stiffness springs also provide forincreased operational speed and manufacturability, among other benefits.A single crystalline silicon hinge is well suited for implementing thisconcept as its Young's modulus is more than twice that of aluminum andits yield stress, more than ten times that of aluminum. The use of ahinge including silicon material also improves performance (byincreasing the resonant frequency) and the manufacturability of thedevice. Additional details related to high stiffness silicon hinges isprovided in co-pending and commonly assigned U.S. patent applicationSer. No. 11/418,941, filed on May 4, 2006 and entitled “ReflectiveSpatial Light Modulator With High Stiffness Torsion Spring Hinge,” whichis incorporated herein by reference in its entirety.

As the array dimensions of the spatial light modulator array is scaledto smaller dimensions, with decreased mirror pitch and increased mirrordensity, embodiments of the present invention provide benefits notavailable from conventional designs. Decreases in pixel size generallyresult in decreases in the longitudinal dimension of the torsion springhinge, with an increased torsion angle as a function of length.Additionally, as the mirror tilt angle is increased, which contributesto increases in contrast ratio, the torsion spring hinges experienceincreased stress during mirror activation. If the lateral dimensions ofthe spring are decreased to reduce the cross-sectional area in responseto these increased stresses, material properties of metal, such asaluminum, may be unsuitable for reliable operation over expectedlifetimes. Thus, issues presented by the scaling of array dimensions tohigher density, such as 1920×1080 pixels in a die of conventional size,provides incentive to utilize embodiments of the present invention inwhich torsion spring hinges include silicon materials, for example,single crystal silicon.

Various embodiments of the present invention provide one or more ofthese aforementioned benefits. Moreover, although a single micro-mirrorassociated with an SLM is illustrated in various embodiments, thepresent invention is not limited to a single micro-mirror. Arrays ofmicro-mirrors suitable for display and other applications are providedaccording to embodiments of the present invention. Furthermore, althoughseveral embodiments refer to particular elements of the SLM, additionalelements are included within the scope of the present invention. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 2B illustrates a cross-sectional view of an SLM in an activatedposition according to an embodiment of the present invention. Singlecrystal silicon landing structure 214 makes contact with mirror landingarea 111 to arrest the rotation of the micro-mirror in the activatedposition. As illustrated in FIG. 2B, peripheral portions of the mirrorplate 210 are free from contact with supporting structures while in theactivated position. As will be understood, the tapered points of thecontact regions reduce stiction forces by thus reducing contact areas.

FIG. 2C illustrates a cross-sectional view of an SLM along an axisperpendicular to that illustrated in FIGS. 2A and 2B. Viewed in adirection perpendicular to the longitudinal axis of the torsion springhinge 240, a cavity 246 formed between the bias line 110 and the torsionspring hinge 116. Additionally, via plug 242 providing electricalconnectivity between bias grid 110 and torsion spring hinge 116 isillustrated. AR coating layer 224 is also illustrated in thiscross-sectional view. In some embodiments, the AR coating is optional,whereas in other embodiments, the AR coating serves to reducereflections of light passing by the edges of the mirror plate.

FIG. 2D is a simplified top view of layers of an SLM according to anembodiment of the present invention. In this top view, an overlay of allthe layers above M4 is illustrated with the exception of the mirrorstructure, which is omitted for purposes of clarity. The overlay topview illustrated in FIG. 2D is provided for purposes of comparison,providing a reference for explaining the particular layers of thefabrication process. Bottom electrodes 112 and top electrodes 118 areelectrically connected using via plugs 242. Torsion spring hinge 116 haslateral dimensions less than those of bias line 110. Referring to FIGS.2B and 2D, one of skill in the art will appreciate that the contactregion of single crystal silicon landing structure 214 is characterizedby a particular geometry. As illustrated in FIG. 2D, the silicon landingstructure 214 is shaped generally as a diamond with tapered points,thereby reducing the contact area between the landing structure and thebias line 110 and associated stiction forces. Other geometries areutilized in other embodiments, as will be evident to one of skill in theart. The mirror post 245 is illustrated as a square feature in FIG. 2Dsupporting the mirror structure (not shown) above the torsion springhinge 116 and the electrodes 112 and 118.

FIGS. 3A-3L illustrate simplified cross-sectional views of a processflow for fabricating an SLM according to an embodiment of the presentinvention. Referring to FIG. 3A, CMOS wafer 105 is illustrated after avia formation process. Bottom electrode layer 112 is formed using a lowtemperature (e.g., less than 350° C.) PVD metal deposition process.Generally, the bottom electrode layer 112 includes a multi-layer metalstack such as 1,000 Å of titanium nitride (TiN), 8,000 Å of aluminum,and another 1,000 Å of TiN. Of course, in alternative embodiments, othersuitable materials that conduct electricity and provide mechanicalsupport for additional layers are utilized to form the bottom electrodelayer 112. Patterning using photolithography and etching processes areutilized to pattern the bottom electrode layer 112 after deposition. Thebias line 110 a and the bias grid 110 b are also formed during this PVDmetal deposition process.

Thus, as shown in the top view illustrated in FIG. 4A below, althoughvarious metal layers defined during the process steps illustrated inFIG. 3A lie in the same vertical plane, they are physically separated soas to operate at different potentials. As described more fully below,various layers are formed during fabrication processes to form theoverall electrode and mirror structure. The various materials andprocesses described below are not intended to limit the scope of thepresent invention but are merely provided as illustrative examples. Oneof ordinary skill in the art would recognize many variations,modifications, and alternatives.

Referring to FIG. 3B, a high density plasma (HDP) insulator deposition,planarization, and patterning process is illustrated. In someembodiments, planarization is accomplished using a chemical mechanicalpolishing (CMP) process, although this is not required by the presentinvention. In the embodiment illustrated in FIG. 3B, the layer 220 is anoxide layer deposited using a low temperature (e.g., less than 350° C.)HDP process, although other layers that provide electrical insulationand mechanical support for additional layers are utilized in alternativeembodiments. Bias line 110 a and bias grid 1110 b are illustrated asbefore and are covered by the oxide layer during the deposition processand prior to the patterning process.

In an embodiment, layer 220 is fabricated from silicon oxide(Si_(x)O_(y)), but this is not required by the present invention. Othersuitable materials may be used within the scope of the presentinvention. For example, layers fabricated from silicon nitride(Si_(x)N_(y)) are utilized in alternative embodiments. In yet otherembodiments, silicon oxynitride (SiON) is used to fabricate layer 220.Moreover, polysilicon material, including amorphous polysilicon, isutilized in yet another alternative embodiment according to the presentinvention. Combinations of such materials may be used to form acomposite layer. Materials with suitable characteristics, includingformation of a strong bond with underlying layers, good adhesion tosubstrate 105, and mechanical rigidity, are acceptable substitutes forSi_(x)O_(y) materials.

Moreover, in some embodiments of the present invention, the process usedto deposit the layer or layers from which layer 220 is fabricated isperformed in light of the structures associated with the devicesubstrate. For example, some CMOS circuitry may be adversely impacted byperforming high temperature deposition processes, as these hightemperature deposition processes may damage metals (e.g., aluminumreflow) or result in diffusion of junctions associated with the CMOScircuitry. Thus, in a particular embodiment of the present invention,low temperature deposition, patterning, and etching processes, such asprocesses performed at temperatures of less than 500° C., are used toform layer 220. In another specific embodiment, deposition, patterning,and etching processes performed at less than 400° C., are used to formlayer 220.

In a particular embodiment, layer 220, with a first thickness, isdeposited on substrate 105. Layer 220 is a silicon dioxide (SiO₂) layerin a specific embodiment of the present invention, but as describedabove, this is not required by the present invention. Other suitablematerials may be used within the scope of the present invention. Forexample, layer 220 is formed by deposition of silicon nitride (Si₃N₄),silicon oxynitride (SiON), combinations thereof, and the like inalternative embodiments. Moreover, polysilicon material, includingamorphous polysilicon, is deposited to form layer 220 in yet anotheralternative embodiment according to the present invention.

The deposited layer 220 has a predetermined first thickness as initiallydeposited. In a specific embodiment, the first thickness is about 2 μm.In other embodiments, the first thickness ranges from about 1.0 μm toabout 3.0 μm. Of course, the thickness will depend on the particularapplications. In some deposition processes, the upper surface of thedeposited layer 220 is uniform across the substrate, resulting in aplanar surface. However, a planar surface after deposition is notrequired by the present invention. In a particular deposition process,the patterned nature of the bias layer 110 and electrodes 112 results inthe thickness of layer 220 varying as a function of lateral position,producing an upper surface that is not entirely flat.

To planarize the upper surface of the deposited layer 220, an optionalCMP step is performed in an embodiment of the present invention. Theresults produced by the CMP process are illustrated by the upper surfaceof layer 220 as shown in FIG. 3B in which the thickness of layer 220 isa second thickness less than the first thickness. During the CMPprocess, material is removed, resulting in a highly polished andplanaraized layer of a second thickness. In a particular embodiment, theroot-mean-square (RMS) roughness of the planarized surface is less thanor equal to about 4 Å. As will be described below, the extremely smoothsurface produced during the CMP process facilitates substrate bonding asshown in FIG. 3C. In embodiments according to the present invention, thesecond thickness of layer 220 is about 0.8 μm. Alternatively, the secondthickness ranges from about 0.5 μm to about 2.5 μm in other embodiments.Of course, the thickness will depend upon the particular applications.

Referring to FIG. 3C, cavity 246 is formed in layer 220 using apatterning and material removal process, such as etching. The cavity 246extends from the upper surface of deposited layer 220 to the bias line110 a. The dimensions of the cavity are selected to provide a rotationspace for the torsion spring hinge as described more fully below. Thecavity 246 is characterized by a volume defined by the depth of thecavity, measured normal to the upper surface of layer 220 and thelateral area of the cavity. According to embodiments of the presentinvention, the surface area defined by the upper surface of layer 220 isgreater than the lateral area of the cavity 246. The greater surfacearea provided by the upper surface of layer 220 compared to the lateralarea of the cavity facilitates substrate bonding as discussed inrelation to FIG. 3C since the bonding area is greater than the unbondedarea. In a specific embodiment, the lateral area of the cavity has awidth and a length of about 1 μm on a pitch of about 10 μm. Thus, thelateral area of the cavity is about 15% of the total original surfacearea of the upper surface of layer 220 prior to formation of cavity 246and the bonding area extends over about 85% of the surface area of layer240. The bonding yield, which is related to the bonding area, is high inembodiments of the present invention as a result of these area ratios.

FIG. 3C illustrates a simplified cross sectional view of the SLM after asubstrate bonding process. According to an embodiment, a silicon oninsulator (SOI) substrate including single crystal silicon layer 240 isbonded to the substrate illustrated in FIG. 3B using substrate bondingtechniques. After the substrates are joined, the insulating and otherlayers (not shown) of the SOI substrate are removed using lapping,grinding, etching, or other thinning processes, to expose the singlecrystal silicon layer 240. Additional information related to thesubstrate bonding process is provided in U.S. patent application Ser.No. 11/028,946, filed on Jan. 3, 2005 and entitled “Method and Structurefor Forming an Integrated Spatial Light Modulator,” which is commonlyassigned and is herein incorporated by reference for all purposes.

Substrate bonding can occur using a variety of techniques. In a specificembodiment, the bonding occurs using a room temperature covalent bondingprocess that results in the formation of a chemical bond at the bondinginterface. Such low temperature bonding processes maintain thestructural and electrical integrity of the CMOS semiconductor substrate105. Each of the faces is cleaned and activated, e.g., by plasmaactivation or by wet processing. The activated surfaces are brought incontact with each other to cause a sticking action. In some bondingprocesses, mechanical force is provided on each substrate structure topress the faces together. In embodiments in which layer 240 is siliconand layer 220 is silicon oxide, silicon bearing bonds are createdbetween the two faces. In alternative embodiments, an oxide layer isformed on the upper surface of layer 220 prior to bonding to provide anoxide-oxide bond interface. The upper surface of layer 220 is polishedby a CMP process in one embodiment while the bonding surface of layer240 is polished as well, providing an extremely smooth surface that isconducive to covalent bonding processes. According to embodiments of thepresent invention, no intermediate bonding material (e.g., epoxy) isutilized during the substrate bonding process. Of course, one ofordinary skill in the art would recognize many other variations,modifications, and alternatives.

According to embodiments of the present invention, bonding techniquesare utilized that provide interfaces characterized by a bondedarea/total area ratio of greater than 10%. For example, the bonded area,characterized by an adhesion test, is greater than 10% of the surfacearea of the upper surface of layer 220. In other embodiments, the bondedarea/total area ratio is greater than 50%. In yet other embodiments, thebonded area/total area ratio is greater than 80%. The increase in bondedarea as a function of the total interface area will result in a strongermechanical connection between the torsion spring hinge layer and thesupport structures coupled to the substrate.

A cavity 246 is formed in between the two substrates during the bondingprocess. As described more fully throughout the present specification,the cavity 246, which was formed using a lithography and etching processduring the process illustrated in FIG. 3B, provides space for rotationof the torsion spring hinge 116 and single crystal landing structure214.

According to some embodiments, a thin SOI substrate is used with adirect implant process used during a portion of the substrate bondingand thinning process. In some embodiments, no epitaxial process is used,providing lower cost and better uniformity for the single crystalsilicon layer. Moreover, reductions in bonding alignment tolerances aswell as better mirror to electrode alignment are provided according toembodiments of the present invention. In particular, because the SOIsubstrate including single crystal silicon layer 240 is planar and doesnot include surface features that are aligned with particular surfacefeatures present on the substrate 105, bonding alignment tolerances arereduced. Furthermore, embodiments of the present invention provide alarge bonding area defined by the upper surface of the oxide layer 220,resulting in higher yield than conventional processes.

As an optional process in fabricating device according to embodiments ofthe present invention, a conductive layer (not shown) is formed incontact with the upper surface of single crystal silicon layer 240,providing for electrical conductivity between the layer 240 andsubsequently deposited layers described more fully below. In anembodiment, the conductive layer is a deposited layer fabricated usingthe same materials utilized to form via plugs 243 described below. Thus,the conductive layer provides electrical conductivity between the viaplugs and the mirror structure described more fully below.

FIG. 3D illustrates a via etch process according to an embodiment of thepresent invention. As shown in FIG. 3D, vias 242 a and 242 b are etchedto provide a path for electrical contact between various layers of thestructure. For example, via 242 a is a via providing an electricalconnection between bottom electrode 112 and a silicon top electrode (notshown) that is fabricated in subsequent processing steps. Additionally,a bias via 242 b is etched to make a contact path to the bias grid 110b. Additional description of the geometry and placement of the vias isprovided below. Generally a two-step etch process is utilized to etchthrough the silicon layer 240 and the oxide layer 220, terminating onthe upper surface of the metal-4 layer forming the bottom electrode 112and the bias grid 110 b.

FIG. 3E illustrates the formation and patterning of via plugs 243 aswell as an AR coating 224 according to an embodiment of the presentinvention. Vias formed during the process illustrated in FIG. 3D arefilled using a via plug formation process that provides electricalconnectivity between the bias layer 110 a and the single crystal siliconlayer 240. In some alternative embodiments of the present invention, alow temperature (less than 350° C.) chemical vapor deposition (CVD)process is utilized to deposit a conformal titanium layer that providesvia step coverage and electrically connects the upper surface of thesingle crystal silicon layer 240 and the bias layer 110. In thisalternative embodiment, the formation of the AR contact layer discussedbelow is modified, forming via plugs of dielectric material on the CVDTi layer. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

AR coatings 224 are formed on portions of the structure, reducing thereflection of light passing by the sides of the micro-mirrors.Generally, the formation of AR coatings includes the deposition andpatterning of dielectric layers of predetermined index of refraction andthickness. In some embodiments, the AR coating process is optional. Oneof ordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 3F illustrates the definition of the hinge and the patterning ofthe step electrode. Single crystal silicon hinge 116 and landingstructure 214 are masked using a lithography process and etched using asilicon etching process. According to embodiments of the presentinvention, the fabrication of the hinge from single crystal siliconprovides numerous benefits, including high reliability. In embodimentsin which the conformal CVD Ti layer is deposited in vias 242, a metaletch precedes the silicon etch process. Referring to FIG. 3F, in regionsabove the bottom electrode 112, both the single crystal silicon layer240 and the HDP oxide 220 are removed, exposing the bottom electrode112. As will be understood, an etch process is terminated using themetal-4 layer as an endpoint is utilized in some embodiments. Of course,other removal processes are included within the scope of the presentinvention. As illustrated in FIG. 3F, in some embodiments, both thehinge and a top portion 118 of the stepped electrode are fabricated fromsilicon, for example, single crystal silicon layer 240.

In a particular embodiment of the present invention, the hingedefinition and the patterning of the step electrodes are separated intotwo lithography/etch processes. A hinge definition etch includespatterning using deep-ultraviolet (DUV) lithography that providescritical dimensions of about 0.18 μm while the step electrode etchincludes patterning using i-line lithography that provides criticaldimensions of about 0.6 μm. Thus, although illustrated as a singleprocess in FIG. 3F, multiple lithography and etching steps characterizedby different resolutions are utilized in some embodiments to reduceprocessing costs while providing desired uniformity and control.

FIG. 3G illustrates the formation of a sacrificial layer 310 on the SLMsubstrate. The material used for layer 310 is sacrificial in the sensethat it provides mechanical support for subsequently deposited andpatterned layers and is then removed in other subsequent processingsteps. In some embodiments, the material used to form sacrificial layer310 is photoresist, although this is not required by the presentinvention. Planarization of the sacrificial layer is performed in someembodiments. Preferably, the planarized surface of layer 310 ischaracterized by a waviness, defined as a peak to valley roughness, ofless than 50 nm. As discussed more fully below, planarization of theupper surface of layer 310 enables the formation of a planar mirrorplate in subsequent processing steps. In one embodiment, photoresistmaterial is spun on substrate 105 with a first thickness. Partialexposure of the photoresist material using an exposure dose less thanthat needed to fully expose the photoresist material is performed.Accordingly, development of the partially exposed photoresist results inremoval of an upper portion of the photoresist material, producing asacrificial layer of a second thickness as illustrated in FIG. 3G. Asillustrated in FIG. 3G, the sacrificial material coats and embeds thevarious components fabricated in previous processing steps.

FIG. 3H illustrates the formation of a mirror post cavity adjacent tothe torsion spring hinge according to an embodiment of the presentinvention. A volume 312 is opened up in the sacrificial material 310with the volume 312 vertically adjacent to the hinge. The geometry ofthe volume 312 is a predefined shape, providing a footprint for a mirrorpost that provides mechanical contact between the hinge and the mirrorplate, described below. In the embodiment illustrated in FIG. 3H, thetop view of the volume 312 is a square. Generally, the tolerances forthe definition of area 312 are such that and i-line lithography processis utilized with a critical dimension of about 1.0 μm. As illustrated inFIG. 3H, the side-walls 314 of the volume 312 are perpendicular to layer240 from which the torsion spring hinge is fabricated. However, this isnot required by the present invention. In some embodiments, theside-walls 314 are tilted at an angle to the vertical, enabling for stepcoverage of the side-walls during a PVD silicon deposition processdescribed more fully below. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 3I illustrates the formation of a mirror structure including amirror post 208 and a mirror plate 210 in contact with the hinge and thesacrificial material according to an embodiment of the presentinvention. In the embodiment illustrated in FIG. 31, the layer fromwhich the mirror post and the mirror plate are formed is deposited usingan amorphous silicon deposition process, for example, a physical vapordeposition (PVD) process. In a particular embodiment, the PVD process isperformed at a temperature of less than 300° C., although in otherembodiments, the formation temperature is lower, for example, less than200° C. or less than 100° C. As illustrated in FIG. 3I, the layer fromwhich the mirror post and the mirror plate are formed is a conformallayer, although this is not required by the present invention. Asdiscussed above, the cross-sectional profile of the mirror post isgenerally tapered to provide for step coverage that includes theside-walls of the mirror post. According to embodiments of the presentinvention, the single crystal silicon hinge material is joined to theamorphous silicon mirror post at the anchor position opened up by theprocess illustrated in FIG. 3H. Because the hinge and mirror structureare both silicon, the CTE of these materials is well matched, providingthermal benefits over conventional designs.

In some embodiments, an adhesion layer, such as a titanium layer, isformed on the upper surface of layer 240 after opening of cavity 312 andprior to formation of the mirror post 208. In these embodiments, theadhesion layer promotes the mechanical integrity of the mechanical bondformed between the hinge and the mirror post. One of ordinary skill inthe art would recognize many variations, modifications, andalternatives.

FIG. 3J illustrates the formation of a reflective layer on the mirrorplate according to an embodiment of the present invention. In theembodiment illustrated in FIG. 3J, the reflective layer 211 is formedusing a PVD process in which a Ti seed layer and an Al layer aredeposited on the mirror plate layer. Preferably, the PVD process isperformed a temperature of less than 100° C. In alternative embodiments,other reflective layers that adhere to the mirror layer are utilized. Insome embodiments, the top surface of the mirror plate is polished toprovide a reflective surface. In a particular embodiment, the topsurface of the mirror plate is characterized by a surface roughness lessthan or equal to about 25 Å RMS. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 3K illustrates a mirror patterning process according to anembodiment of the present invention. A lithography and etching processis utilized to selectively remove the Ti/Al layer 211 and the amorphoussilicon layer 210 to form mirror 212. In one embodiment, the dimensionsof the mirror are 15 μm×15 μm, whereas in another embodiment thedimensions of the mirror are 9.6 μm by 9.6 μm. In other embodiments,other dimensions are utilized as appropriate to the particularapplications. FIG. 3L illustrates a process step in which thesacrificial material is removed, freeing the mirror plate to rotateabout the torsion spring hinge. In regions 320, the sacrificial materialis removed, releasing the mirror. In some embodiments in which thesacrificial material is photoresist, a plasma ashing process is used toremove the photoresist, exposing the mirror and freeing the mirror torotate under the influence of the electrodes and bias voltages.

According to embodiments of the present invention, SLMs are providedwith mirrors in which the whole structure of mirror is silicon, orcomposites of silicon and other materials, not aluminum. The use of anall silicon mirror structure provides benefits including mirrorstructures with high mechanical strength, a high degree of flatness, andmechanical rigidity. Additionally, embodiments of the present inventionuse different forms of silicon for different parts of the mirror andhinge structure. In a specific embodiment, for example, the hinge isfabricated from single crystal silicon as a result of the mechanicalproperties of single crystal silicon. In this specific embodiment, themirror plate is fabricated from amorphous silicon so that the mirrorplate does not flex significantly since amorphous silicon is strong,flat, and rigid. Additionally, in this specific embodiment, the CTE ofthe mirror structure and the hinge are well matched.

As described more fully throughout the present specification, thematerials used in the fabrication of mirror post 208 and mirror plate210 are not limited to amorphous silicon, but a wide variety ofmaterials may be used. Other suitable materials for the mirror post andthe mirror plate include polysilicon, silicon metal alloys (e.g.,silicon/aluminum), metal, (e.g., tungsten, titanium, titanium nitride),combinations of these materials, and the like.

The process flow illustrated in FIGS. 3A-3L provides a baseline designfor the fabrication of an SLM. Alternative embodiments modify and changeportions of the baseline design while still providing SLMs andmicro-mirrors within the scope of the present invention. The processflow discussed above is merely an exemplary process for fabricating anSLM and is not intended to limit embodiments of the present invention.In alternative embodiments, the number of steps, the order of the steps,and the lengths of the various steps are modified depending on theparticular application. Other alternatives can also be provided wheresteps are added, one or more steps are removed, or one or more steps areprovided in a different sequence without departing from the scope of theclaims herein. Further details of suitable process flows can be foundthroughout the present specification and more particularly below.

In a particular embodiment of the present invention, a method offabricating an optical deflection device is provided. The methodincludes providing a substrate, for example, a CMOS substrate includinga number of electrode devices. Additionally, the substrate may include anumber of electrode drivers, a pulse width modulation array, and othersuitable electronic circuitry associated with the electrode devices. Inan embodiment, the electrode devices are disposed to form amulti-dimensional array pattern associated with pixels of the opticaldeflection device. The method also includes forming a planarizeddielectric layer over the substrate. In a specific embodiment, formingthe planarized dielectric layer includes depositing an oxide layer usingan HDP process and planarizing the deposited oxide layer using a CMPprocess. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

In some embodiments, the process of depositing an oxide layer isperformed at a temperature less than a temperature associated with astate change of an underlying material, such as the CMOS circuitry, forexample the electrode devices. The temperature of the oxide depositionprocess is preferably less than an aluminum reflow temperature, which isabout 450° C. In another embodiment, the process of depositing an oxidelayer is performed at a temperature less than a temperature less than aglass transition temperature of photoresist, which is about 150° C.

The method further includes forming a cavity in the planarizeddielectric layer. In some embodiments, the cavity is formed by anetching process that removes a predetermined amount of the planarizeddielectric layer. The cavity provides a rotation space for a torsionspring hinge and optional landing structures fabricated in subsequentprocessing steps. A layer transfer process is performed to bond a singlecrystal silicon layer to the planarized dielectric layer. The layertransfer process generally includes a substrate bonding process thatprovides a covalent bond between the planarized dielectric layer and thesingle crystal silicon layer. In particular embodiments, the substratebonding process utilizes an SOI substrate, various layers of which areremoved to provide the single crystal silicon layer.

The method additionally includes forming a plurality of vias passingthrough the single crystal silicon layer and the planarized dielectriclayer and forming a plurality of electrical connections passing throughthe plurality of vias. In some embodiments, the plurality of viasinclude a first set of vias providing an electrical conduction path to abias line and a second set of vias providing an electrical conductionpath to a bias grid. Generally, the plurality of electrical connectionsutilize via plugs formed using conventional via plug formationprocesses, such as a tungsten plug process. In other embodiments, theplurality of electrical connections utilizes a conformal metal layerthat is deposited in or on the inner walls of the vias. In a specificembodiment, the conformal metal layer is a composite Ti/Al layer.

Moreover, the method includes forming a hinge coupled to the substrate.A photolithography patterning and etching process is used to form thehinge in some embodiments. A planarized material layer coupled to thehinge is formed out of photoresist in some embodiments and a cavity isformed in the planarized material layer. The cross-sectional profile ofthe cavity is generally tapered, with a larger area at the top of thecavity than at the bottom of the cavity. Utilizing such a taperedcavity, PVD processes provide a layer of continuous material insubsequent deposition processes. A mirror structure including a mirrorpost and a mirror plate is formed by filling at filling at least aportion of the cavity. The mirror structure is released by removing theplanarized material layer, generally using an oxygen plasma ashingprocess to remove the photoresist layer.

According to some embodiments, the mirror structure is formed usingsilicon materials or composites of silicon and other materials. Inparticular, an amorphous silicon layer is deposited and planarized at atemperature of less than 150° C. to form the mirror post and the mirrorplate. In other embodiments, the mirror structure is fabricated usingpolysilicon, silicon/metal alloys such as silicon/Al alloys,combinations of these materials, and the like. As an optionalfabrication process, a mirror coating layer, for example, a Ti/Al layer,coupled to the mirror structure is formed to increase the reflectivityof the mirror structure, which is desirable for display applications.

FIGS. 4A-4F are simplified top views of several layers of an SLMfabricated using the process flow illustrated in FIGS. 3A-3L. Referringto FIG. 4A, bottom electrode 112 and bias layer 110 are illustrated asmask layer 410. The lateral spacing between the bottom electrodes andthe bias layer provides for electrical isolation between these layers.FIG. 4B illustrates the mask pattern 420 used to open up portions of theoxide layer 220 at a position vertically adjacent a portion of the biasline 110 as illustrated in FIG. 3B. As described more fully throughoutthe present specification, the area opened and illustrated in the topview illustrated in FIG. 4B provides a bias source and a landing areafor the mirror landing structure.

FIG. 4C illustrates the mask pattern 430 used to define the lateralpositioning of the vias in a particular embodiment. Referring to FIG.3D, a first set of vias 242 b are provided to make electrical contactwith the bias line 110 a and a second set of vias 242 a are provided tomake electrical contact with the bias grid 110 b. Of course, thegeometry and placement of the vias will depend on the particularapplications. FIG. 4D illustrates a mask pattern 432 used in thepatterning of AR coatings 224 in an embodiment of the present invention.In addition to covering the mirror posts, the pattern extends around theperiphery of the mirror plate fabricated in subsequent steps.

FIG. 4E illustrates a mask pattern 440 used in the definition of thehinge and the patterning of the step electrode in a particularembodiment of the present invention. The single crystal silicon torsionspring hinge 116 and landing structure are laterally separated from thetop electrodes 118 during the patterning step discussed in relation toFIG. 3F. As discussed previously, in some embodiments of the presentinvention, multiple lithography and etching steps are utilized to formthe torsion spring hinge structure and the top electrodes 118. FIG. 4Fillustrates the mask pattern 450 used to define the mirror post opening312 discussed with reference to FIG. 3H that provides a depositioninterface between the layer 240 including the torsion spring hinge andthe mirror post 208.

FIG. 5 is a simplified top view illustration of an SLM with dual landingtips according to an embodiment of the present invention. The bottomelectrode layer 112, silicon top electrode 118, and other layers areshown for purposes of illustration. In the embodiment illustrated inFIG. 5, the torsion spring hinge and landing structure include a numberof landing tips 510 and 512. In an embodiment, the landing tips aresymmetrically placed about a center portion of the mirror. Motion of themirror to the activated position is arrested as the landing tips makecontact with the mirror landing areas provided as part of the bias line.The lateral dimensions of the landing tips are selected as a function ofthe angle of rotation of the mirror plate and the geometry of thestructure. In alternative embodiments, additional landing tips areprovided at various positions. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 6 is a simplified top view illustration of an SLM with landingposts according to an embodiment of the present invention. Asillustrated in FIG. 6, a pair of landing posts 610 is positioned on oneside of the torsion spring hinge and a second pair of landing posts 612are positioned on another side of the torsion spring hinge. Uponactivation of the mirror, the various sets of landing posts arrest themotion of the mirror plate, providing a fixed angular rotation. In anembodiment, the landing posts are formed on the same level as thesilicon top electrode. The geometry of the landing posts is a predefinedshape, reducing the stiction forces while providing high reliability andlongevity.

FIG. 7A illustrates a simplified cross-sectional view of an SLM withsilicon landing springs according to an embodiment of the presentinvention. The cross-sectional view shown in FIG. 7A illustrates contactbetween the landing spring 710 and the landing area on the bias line.Referring to the simplified top view illustrated in FIG. 7B, thedimensions of the tip 710 of the landing spring is narrowed to provide adegree of compliance and flexure. As will be evident to one of skill inthe art, the flexing of the landing spring will provide for a restoringforce to counteract stiction forces present in the landing region. Ofcourse, the particular dimensions of the tip 710 will depend on theparticular applications. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

Also illustrated in FIG. 7A are alternative in torsion spring hingedesigns provided by embodiments of the present invention. Variations inhinge design, such as horizontal hinges 720 a or vertical hinges 720 bwith relaxed critical dimension control are provided by embodiments ofthe present invention. Using a hidden hinge design, the useful shapesand sizes of the hinges are numerous in comparison with conventionalhinge designs. Thus, a large design window in which to design the hingeto provide a desired flexibility and rigidity are provided byembodiments of the present invention. Additional discussion of theapplication to flexible landing spring tips to the reduction of stictionforces is SLMs is provided in U.S. Pat. No. 7,026,695, issued Apr. 1,2006, commonly assigned and herein incorporated by reference for allpurposes.

FIG. 8 illustrates an SLM according to a particular embodiment of thepresent invention. As discussed previously, AR coatings are optional insome embodiments of the present invention. In the SLM design illustratedin FIG. 8, no AR coatings are provided in regions 810 above the biasgrid 110 b. The removal of additional structures in comparison withprevious designs is also illustrated. According to some embodiments, theremoval of these structures reduces the opportunity for mechanicalinterference and stray reflections that may reduce the system contrast.In yet other embodiments, various structures are removed and AR coatingsare formed, for example, on the bias grid 110 b. One of ordinary skillin the art would recognize many variations, modifications, andalternatives.

FIG. 9 illustrates a simplified cross-sectional view of an SLM with asilicon mirror plate electrode according to an embodiment of the presentinvention. As illustrated in FIG. 9, the single crystal silicon layer910 is used as both a landing structure and an electrode. The landingstructure defined by the outer portions of layer 910 makes contact withthe bias line according to embodiments of the present invention. The useof layer 910 as the electrode enables designs in which the mirror plateis not conductive. In some embodiments, the design illustrated in FIG. 9will reduce the operating voltages of the SLM by decreasing the distancefrom the bias line to the electrode.

FIGS. 10A-10D illustrate simplified cross-sectional views of a processflow for fabricating an SLM with an electrical contact according to analternative embodiment of the present invention. As illustrated in FIG.10A, a portion 1010 of the amorphous silicon layer 210 is removed. In anembodiment, the amorphous silicon layer is masked and etched using asilicon etch process to expose the single crystal silicon hinge, whichis a conductive layer. As described more fully below, opening 1010provides a path for electrical conduction between the single crystalsilicon hinge and layers subsequently deposited.

FIG. 10B illustrates the formation of a reflective and conductive layeraccording to an embodiment of the present invention. As illustrated, thedeposition of a composite titanium seed layer and an aluminum reflectivelayer 212 on portions of the mirror post and the mirror plate isperformed. As will be evident to one of skill in the art, electricalcontact at the interface between the single crystal silicon hinge andthe composite Ti/Al layer (or TiN/Ti layers) is provided at a centralportion of the hinge. In some embodiments, metal PVD processes similarto those previously described are utilized to form a conformal layer 212as illustrated in FIG. 10B. FIG. 10C illustrates a mirror releaseprocess according to an embodiment of the present invention. Asillustrated in FIG. 10C, the amorphous silicon mirror layer 210 and thereflective/conductive layer 212 are patterned and etched to form theillustrated mirror structure. As illustrated by reference number 1020,electrical contact between the single crystal silicon hinge and thereflective/conductive layer is provided. In a manner similar to thatdiscussed previously, sacrificial material illustrated in FIGS. 10A and10B is removed during the mirror release process.

In the alternative embodiment illustrated by FIG. 10D, electricallyconductive and reflective layer 1030 is formed prior to deposition ofthe amorphous silicon layer 210. Referring to FIGS. 3H and 31, the PVDformation of layer 1030 may be performed after the opening of aperture312 and prior to the deposition of amorphous silicon layer 210, therebyinserting a metal deposition process in the process flow. In someembodiments, a composite Ti/Al metal layer is formed as discussed above.Amorphous silicon layer 210 is formed as discussed above, as well as atop metal layer 212. Electrical contact is provided by the contactbetween the single crystal silicon hinge and layer 1030. Thus, bothelectrical conductivity and optical reflection functions are performedby layers 1030 and 212. As will be evident to one of skill in the art,many of the previous processing steps may be utilized to fabricate thestructure illustrated in FIG. 10D, including a mirror release process.In the embodiment illustrated in FIG. 10D, the bottom metal layer 1030serves as a mirror electrode, reducing the operating voltages andproviding other benefits.

FIG. 11 illustrates a simplified cross section view of a silicon/Alalloy mirror according to an embodiment of the present invention. Asillustrated in FIG. 11, the amorphous silicon mirror layer is replacedby a silicon/Al alloy layer 1110 that is both conductive and reflective.Referring to FIGS. 31 and 3J, the silicon/Al alloy mirror layer 1110 isfabricated in place of the layers illustrated in those figures. As willbe evident to one of skill in the art, many of the previous processingsteps may be utilized to fabricate the structure illustrated in FIG. 11,including a mirror release process.

FIGS. 12A-12D illustrate simplified cross-sectional views of a processflow for fabricating an SLM with a flat amorphous silicon mirroraccording to an embodiment of the present invention. Merely by way ofexample, the processes shown in FIGS. 12A-12B may be used to perform avariant of the process illustrated in FIG. 31. As illustrated in FIG.12A, an amorphous silicon layer 1210 is deposited on the sacrificialmaterial 310 formed in a previous processing step (e.g., the processillustrated in FIG. 3H). In an embodiment, a PVD process is used to forman amorphous silicon layer of sufficient thickness to fill region 312above the torsion spring hinge. Depending on the deposition conditions,non-planar features may be present in the upper surface of layer 1210.

In FIG. 12B, a planarization process is illustrated to form flat surface1220. According to embodiments of the present invention, polishing orCMP processes are utilized to planarize the amorphous silicon layerpreviously deposited. The formation of a composite reflective layer 212,for example Ti/Al, is illustrated in FIG. 12C and a mirror releaseprocess is illustrated in FIG. 12D. Utilizing embodiments the presentinvention such as the one illustrated in FIG. 12D, SLMs characterized byhigh optical quality are provided. The flat upper surface of the mirror,for the example, in comparison to the mirror shown in FIG. 3L, providesfor high fill ratio and reduced scattering among other opticalqualities. One of ordinary skill in the art will recognize the benefitsprovided by such a design.

FIGS. 13A-13E illustrate simplified cross-sectional views of a processflow for fabricating an SLM with a flat composite mirror according to anembodiment of the present invention. As illustrated in FIG. 13A, anopening 1010 is formed in the amorphous silicon layer 210 to provideelectrical contact between the hinge and subsequently deposited layers.A tungsten deposition process is illustrated in FIG. 13B, filling thegap above the hinge and providing electrical contact between thetungsten layer 1310 and the hinge through opening 1010 as previouslyillustrated and discussed. Although the upper surface of tungsten layer1310 is illustrated as planar, this is not required by the presentinvention. As discussed below, planarization processes are utilized insome embodiments to planarize tungsten layer 1310.

FIG. 13C illustrates a tungsten CMP/etchback process that reduces thetungsten thickness to a level aligned with an upper surface of theamorphous silicon layer 210. As will be evident to one of skill in theart, tungsten deposition and planarization processes are widely used invia plug applications. Some embodiments of the present invention utilizethese processes. The formation of a composite reflective layer 212, forexample Ti/Al, is illustrated in FIG. 13D and a mirror release processis illustrated in FIG. 13E. Utilizing embodiments the present inventionsuch as the one illustrated in FIG. 13E, SLMs characterized by highoptical quality are provided, similar to those discussed in relation toFIGS. 12A-12D. The flat surface of the mirror provides for high fillratio among other optical qualities. Additionally, electrical contactbetween a reflective layer and the hinge is provided via the tungstenplug filling opening 1010. One of ordinary skill in the art willrecognize the benefits provided by such a design.

FIGS. 14A-14B illustrate simplified cross-sectional views of a processflow for fabricating an SLM with a low temperature spin on glass (SOG)mirror according to an embodiment of the present invention. Asillustrated in FIG. 14A, a low temperature SOG layer 1410 is formed,filling the gap 312 between sacrificial material 310 that is formed aspreviously described. The formation of a reflective layer 212 on top ofthe low temperature SOG layer 1410 as well as a mirror release processis illustrated in FIG. 14B. Utilizing SOG processes, embodiments of thepresent invention fill the gap 312 and form a flat mirror surface in areduced number of processing steps. In general, bias and otherelectrical contacts are formed as previously described.

FIG. 15 is a simplified flowchart illustrating a process of fabricatingan optical deflection device according to an embodiment of the presentinvention. The method includes providing a substrate (1510) and forminga planarized dielectric layer over the substrate (1512). In anembodiment, the substrate includes a number of electrodes and associatedelectrode drivers. Merely by way of example, the substrate is a CMOSsubstrate with integrated electrodes, memory buffer, video displaycontroller for processing video signals, and a pulse width modulationarray. Other components suitable for controlling an array ofmicro-mirrors as deflection devices are provided by other embodiments.One of ordinary skill in the art would recognize many variations,modifications, and alternatives.

In a particular embodiment, forming a planarized dielectric layerincludes depositing an oxide layer using an HDP process and planarizingthe deposited oxide layer using a CMP process. The formation andplanarization of the oxide layer are performed at temperatures that willnot damage the CMOS substrate, for example, by melting aluminumcontacts. Low temperature processes are thus utilized in processingsteps discussed herein.

The method also includes forming a cavity in the planarized dielectriclayer (1514), performing a layer transfer process to bond a singlecrystal silicon layer to the planarized dielectric layer (1516), forminga plurality of vias passing through the single crystal silicon layer andthe planarized dielectric layer (1518), and forming a plurality ofelectrical connections passing through the plurality of vias (1520). Ina specific embodiment, the plurality of vias includes a first set ofvias providing an electrical conduction path to a bias line and a secondset of vias providing an electrical conduction path to a bias grid.Thus, multiple separate electrical conduction paths are provided by thevias. The plurality of electrical connections include either via plugsor a conformal metal layer that is deposited on the single crystalsilicon layer and in the vias. Merely by way of example, the conformalmetal layer may be a composite Ti/Al layer that provides for via stepcoverage and electrical connectivity between the bias level and thesingle crystal silicon layer.

The method further includes forming a hinge coupled to the substrate(1522), forming a planarized material layer coupled to the hinge (1524),and forming a cavity in the planarized material layer (1526). In aspecific embodiment, the method includes forming an upper electrode bypatterning and removing a portion of the single crystal silicon layer.The formation of the hinge and the upper electrodes may be performedconcurrently or in two separate processing steps. In an embodiment inwhich two processing steps are utilized, different lithography processescharacterized by different critical dimension values may be utilized,for example, defining the hinge with a higher resolution lithographyprocess than the resolution used for defining the upper electrode. Theplanarized material layer comprises photoresist in some embodiments,which embeds the underlying layers and removed during subsequentprocessing steps using well-known photoresist removal processes andtools.

The method additionally includes forming a mirror structure including asilicon material (1528), forming a mirror coating layer (1530), andreleasing the mirror structure (1532). The formation of the mirrorstructure may include depositing and planarizing an amorphous siliconmirror layer using processes performed at a temperature of less than150° C. In a particular embodiment, the mirror coating layer includes acomposite Ti/Al layer and the silicon mirror layer is released using anO₂ plasma ashing process.

The above sequence of steps provides a method for fabricating an opticaldeflection device such as an SLM according to an embodiment of thepresent invention. As shown, the method uses a combination of stepsincluding a way of forming movable micro-mirror structures. Otheralternatives can also be provided where steps are added, one or moresteps are removed, or one or more steps are provided in a differentsequence without departing from the scope of the claims herein. Furtherdetails of the present method can be found throughout the presentspecification.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

1. An optical deflection device for a display application, the opticaldeflection device comprising: a semiconductor substrate comprising anupper surface region; one or more electrode devices provided overlyingthe upper surface region; a hinge device comprising a silicon materialand coupled to the upper surface region; a spacing defined between theupper surface region and the hinge device; and a mirror structurecomprising: a post portion coupled to the hinge device, and a mirrorplate portion coupled to the post portion and overlying the hingedevice.
 2. The optical deflection device of claim 1 wherein the siliconmaterial comprises single crystal silicon.
 3. The optical deflectiondevice of claim 1 further comprising a reflective layer overlying aportion of the mirror structure.
 4. The optical deflection device ofclaim 3 wherein the reflective layer comprises a composite Ti/Al layer.5. The optical deflection device of claim 1 wherein the mirror structurecomprises a polished surface adapted to reflect incident radiation. 6.The optical deflection device of claim 1 wherein the mirror structurecomprises a surface characterized by a surface roughness, the surfaceroughness being less than or equal to about 25 Å RMS.
 7. The opticaldeflection device of claim 1 wherein the semiconductor substratecomprises a CMOS substrate.
 8. The optical deflection device of claim 1wherein the one or more electrode devices comprise a multi-levelelectrode including a first layer coupled to the semiconductor substrateand a second layer coupled to the first layer and extending to apredetermined height from the substrate.
 9. The optical deflectiondevice of claim 8 wherein the second layer and the hinge device arefabricated from a single piece of material.
 10. The optical deflectiondevice of claim 9 wherein the single piece of material is a singlecrystal silicon layer.
 11. The optical deflection device of claim 1wherein the mirror structure comprises a silicon material.
 12. Theoptical deflection device of claim 11 wherein the silicon material ofthe mirror structure comprises amorphous silicon.
 13. The opticaldeflection device of claim 11 wherein the silicon material of the mirrorstructure comprises a polysilicon layer.
 14. The optical deflectiondevice of claim 11 wherein the silicon material of the mirror structurecomprises a silicon/metal alloy.
 15. The optical deflection device ofclaim 14 wherein silicon/metal alloy comprises a silicon/Al alloy. 16.The optical deflection device of claim 1 wherein the mirror structurecomprises a metal material.
 17. The optical deflection device of claim16 wherein the metal material of the mirror structure comprisestungsten.
 18. The optical deflection device of claim 1 wherein the hingedevice is adapted to allow the mirror structure to move from a firstregion to a second region.
 19. The optical deflection device of claim 18wherein the first region is associated with a position at which themirror structure is tilted at an angle of about 15° and the secondregion is associated with a position at which the mirror structure istitled at an angle of about −15°.
 20. The optical deflection device ofclaim 1 further comprising one or more landing structures coupled to thesemiconductor substrate and adapted to arrest a motion of the mirrorstructure.
 21. The optical deflection device of claim 20 wherein themotion of the mirror structure is arrested at an angle of about 15° andat an angle of about −15°.
 22. A spatial light modulator for displayapplications comprising: a semiconductor substrate comprising an uppersurface region; one or more multi-level electrode devices providedoverlying the upper surface region, wherein the one or more multi-levelelectrode devices comprise a first level and a second level; aninsulating layer overlying the first level of the one or moremulti-level electrode devices; a hinge device coupled to the insulatinglayer, wherein the hinge device comprises a silicon material and iscoplanar with the second level of the one or more multi-level electrodedevices; a first spacing defined between the semiconductor substrate andthe hinge device; a mirror structure comprising a silicon material, themirror structure overlying a portion of the hinge device and adapted tomove from a first position to a second position; a second spacingdefined between the first level of the one or more multi-level electrodedevices and the mirror structure; and a third spacing defined betweenthe second level of the one or more multi-level electrode devices andthe mirror structure.
 23. The spatial light modulator of claim 22further comprising a first set of vias providing electrical connectivitybetween the first level of the one or more multi-level electrode devicesand the second level of the one or more multi-level electrode devices.24. The spatial light modulator of claim 22 further comprising a secondset of vias providing electrical connectivity between a bias structurecoupled to the semiconductor substrate and the hinge device.
 25. Thespatial light modulator of claim 22 wherein the insulating layercomprises an HDP oxide layer.
 26. The spatial light modulator of claim22 wherein the first spacing provides an open region for the hingedevice to rotate in response to electrical signals provided by the oneor more multi-level electrode devices.
 27. The spatial light modulatorof claim 22 wherein the second spacing and the third spacing provideopen regions for the mirror structure to rotate in response toelectrical signals provided by the one or more multi-level electrodedevices.
 28. The spatial light modulator of claim 22 further comprisingone or more landing structures coupled to the semiconductor substrateand adapted to contact the mirror structure in at least one of the firstposition or the second position.
 29. The spatial light modulator ofclaim 28 wherein an upper portion of the one or more landing structurescomprises a layer coplanar with the hinge device.
 30. The spatial lightmodulator of claim 22 wherein the silicon material of the mirrorstructure comprises amorphous silicon.
 31. The spatial light modulatorof claim 22 wherein the silicon material of the mirror structurecomprises a polysilicon layer.
 32. The spatial light modulator of claim22 wherein the silicon material of the mirror structure comprises asilicon/metal alloy.
 33. The spatial light modulator of claim 32 whereinsilicon/metal alloy comprises a silicon/Al alloy.
 34. The spatial lightmodulator of claim 22 wherein the silicon material of the hingestructure comprises single crystal silicon.
 35. The spatial lightmodulator of claim 22 wherein the first position is characterized by afirst angle of rotation of about 15° and the second position ischaracterized by a second angle of rotation of about −15°.
 36. An arrayof optical deflection devices for a display application, the arraycomprising: a semiconductor substrate comprising: a plurality ofelectrode devices disposed in array form as an array of cells, and abonding region; a plurality of hinge devices including silicon material,each of the plurality of hinge devices comprising a bonding portion anda deposition interface, wherein the bonding portion of the plurality ofhinge devices is bonded to a portion of the bonding region of thesemiconductor substrate; a spacing defined between the plurality ofelectrode devices and the plurality of hinge devices; and a plurality ofmirror structures, each of the plurality of mirror structurescomprising: a post region coupled to the deposition interface of theplurality of hinge devices, and a mirror plate overlying a cell of thearray of cells of the plurality of electrode devices.
 37. The array ofoptical deflection devices of claim 36 wherein the plurality ofelectrode devices comprise a plurality of multi-level electrode devices.38. The array of optical deflection devices of claim 37 furthercomprising a first set of vias providing electrical connectivity betweena first level of the plurality of multi-level electrode devices and asecond level of the plurality of multi-level electrode devices.
 39. Thearray of optical deflection devices of claim 36 further comprising asecond set of vias providing electrical connectivity between a biasstructure coupled to the semiconductor substrate and the hinge devices.40. The array of optical deflection devices of claim 36 furthercomprising a plurality of landing structures disposed in array form asan array of cells and coupled to the semiconductor substrate.
 41. Thearray of optical deflection devices of claim 40 wherein the plurality oflanding structures are adapted to arrest a motion of the plurality ofmirror structures.
 42. The array of optical deflection devices of claim40 further comprising a plurality of multi-level electrode devices,wherein the plurality of landing structures comprise a layer that iscoplanar with a level of the plurality of multi-level electrode devices.43. The array of optical deflection devices of claim 36 wherein theplurality of hinge devices comprise a single crystal silicon material.44. The array of optical deflection devices of claim 36 wherein theplurality of mirror structures comprise a silicon material.
 45. Thearray of optical deflection devices of claim 44 wherein the siliconmaterial of the plurality of mirror structures comprises an amorphoussilicon material.
 46. The array of optical deflection devices of claim36 wherein the plurality of mirror structures comprise a metal mirrormaterial.
 47. The array of optical deflection devices of claim 36wherein the spacing provides an open region adapted to receive a portionof each of the plurality of hinge devices during a rotation of each ofthe plurality of hinge devices.
 48. The array of optical deflectiondevices of claim 47 wherein rotation of each of the plurality of hingedevices occurs in response to electrical signals provided by theplurality of electrode devices.
 49. The array of optical deflectiondevices of claim 36 further comprising an insulating layer overlying aportion of the plurality of electrode devices.
 50. The array of opticaldeflection devices of claim 49 wherein the insulating layer comprises anHDP oxide layer.
 51. The array of optical deflection device of claim 36wherein the semiconductor substrate comprises a CMOS substrate.
 52. Thearray of optical deflection device of claim 36 wherein each of thesilicon mirror structures is adapted to move from a first positioncharacterized by a rotation angle of about 150 to a second positioncharacterized by a rotation angle of about −15°.
 53. The array ofoptical deflection device of claim 36 wherein the bonding region of thesemiconductor substrate is characterized by a global planarity definedby a substrate bow of about 100 μm over an 8″ semiconductor substrate.54. The array of optical deflection device of claim 36 wherein thebonding region of the semiconductor substrate is characterized by a dieplanarity of about 5,000 Å.
 55. The array of optical deflection deviceof claim 36 wherein the array of cells is characterized by a pitch ofless than or equal to about 10.8 μm.
 56. The array of optical deflectiondevice of claim 55 wherein the array of cells is characterized by apitch of less than or equal to about 9.0 μm.
 57. The array of opticaldeflection device of claim 36 wherein the array of cells ischaracterized by a high density array dimension of up to 1920 by 1080.58. A micro-mirror for display applications, the micro-mirrorcomprising: a semiconductor substrate comprising an electrode devicelayer and a bonding region; a hinge device comprising silicon materialbonded to the bonding region of the semiconductor substrate, wherein thehinge device comprises a deposition interface opposing the bondingregion of the semiconductor substrate; a mirror post coupled to thedeposition interface and extending to a predetermined distance from thesemiconductor substrate; and a mirror plate coupled to the mirror postand overlying the electrode device layer.
 59. The micro-mirror of claim58 wherein the bonding region of the semiconductor substrate ischaracterized by a local micro-roughness of less than 5 Å over a 2 μm by2 μm scan area.
 60. The micro-mirror of claim 58 wherein the hingedevice comprises a single crystal silicon material.
 61. The micro-mirrorof claim 58 wherein the mirror post comprises a silicon material. 62.The micro-mirror of claim 61 wherein the silicon material comprisesamorphous silicon.
 63. The micro-mirror of claim 58 further comprisingan adhesion layer disposed between the hinge device and the mirror post.64. The micro-mirror of claim 63 wherein the adhesion layer comprisestitanium.
 65. The micro-mirror of claim 58 wherein the hinge device ischaracterized by a torsional stiffness from about 40 μN-μm to about 100μN-μm.
 66. The micro-mirror of claim 58 wherein the mirror plate ischaracterized by a perimeter of less than 80 μm.
 67. A multi-layersemiconductor structure for fabricating a spatial light modulator, themulti-layer semiconductor structure comprising: a semiconductorsubstrate comprising a plurality of bias electrode devices and aplurality of activation electrode devices; an oxide layer coupled to thesemiconductor substrate and comprising a bonding interface extending toa predetermined height from the semiconductor substrate, wherein theoxide layer further comprises a first portion extending from a first oneof the plurality of activation electrode devices to the bondinginterface and a second portion extending from a second one of theplurality of activation electrode devices to the bonding interfacethereby forming an oxide free region adjacent one of the plurality ofbias electrode devices and between the first portion and the secondportion; and a silicon layer bonded to the bonding interface of theoxide layer.
 68. The multi-layer semiconductor structure of claim 67wherein the plurality of bias electrodes carry a bias voltage and theplurality of activation electrodes carry an addressing voltage.
 69. Themulti-layer semiconductor structure of claim 67 wherein the bondingregion of the semiconductor substrate is characterized by a localmicro-roughness of less than 5 Å over a 2 μm by 2 μm scan area.
 70. Themulti-layer semiconductor structure of claim 67 wherein the bondinginterface is characterized by a global planarity defined by a substratebow of about 100 μm or less over an 8″ semiconductor substrate.
 71. Themulti-layer semiconductor structure of claim 67 wherein the oxide layercomprises a silicon oxide layer.
 72. The multi-layer semiconductorstructure of claim 71 wherein the silicon oxide layer comprises an HDPoxide layer.
 73. The multi-layer semiconductor structure of claim 67wherein the silicon layer comprises a single crystal silicon layer.